KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2018-10-08
Print Publication Date2018-10-15
Permanent link to this recordhttp://hdl.handle.net/10754/628882
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AbstractWe report, to the best of our knowledge, the first employment of a self-injection locking scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have achieved a 7.11 nm (521.10–528.21 nm) tunability in a green color with different injection currents and temperatures. The system exhibited mode spectral linewidth as narrow as ∼69 pm and a side mode suppression ratio as high as ∼28 dB, with a maximum optical power of ∼16.7 mW. In the entire tuning window, extending beyond 520 nm, a spectral linewidth of ≤100 pm, high power, and stable performance were consistently achieved, making this, to the best of our knowledge, the first-of-its-kind compact tunable laser system attractive for spectroscopy, imaging, sensing systems, and visible light communication.
CitationShamim MHM, Ng TK, Ooi BS, Khan MZM (2018) Tunable self-injection locked green laser diode. Optics Letters 43: 4931. Available: http://dx.doi.org/10.1364/ol.43.004931.
SponsorsKing Fahd University of Petroleum and Minerals (KFUPM) (KAUST004); King Abdulaziz City for Science and Technology (KACST) (EE2381, KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01); KAUST–KFUPM Special Initiative (KKI) Program.
PublisherThe Optical Society