Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy

Abstract
In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/NiFe (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.

Citation
Wasef S, Amara S, Alawein M, Fariborzi H (2018) Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). Available: http://dx.doi.org/10.1109/EDTM.2018.8421415.

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

Conference/Event Name
2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

DOI
10.1109/EDTM.2018.8421415

Additional Links
https://ieeexplore.ieee.org/document/8421415

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