Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2018-09-07
Print Publication Date2018-03
Permanent link to this recordhttp://hdl.handle.net/10754/628839
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AbstractIn this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/NiFe (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.
CitationWasef S, Amara S, Alawein M, Fariborzi H (2018) Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). Available: http://dx.doi.org/10.1109/EDTM.2018.8421415.
Conference/Event name2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018