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dc.contributor.authorShan, Yingying
dc.contributor.authorLyu, Zhensheng
dc.contributor.authorGuan, Xinwei
dc.contributor.authorYounis, Adnan
dc.contributor.authorYuan, Guoliang
dc.contributor.authorWang, Junling
dc.contributor.authorLi, Sean
dc.contributor.authorWu, Tom
dc.date.accessioned2018-09-03T13:28:31Z
dc.date.available2018-09-03T13:28:31Z
dc.date.issued2018
dc.identifier.citationShan Y, Lyu Z, Guan X, Younis A, yuan guoliang, et al. (2018) Solution-Processed Resistive Switching Memories based on Hybrid Organic-Inorganic Materials and Composites. Physical Chemistry Chemical Physics. Available: http://dx.doi.org/10.1039/c8cp03945c.
dc.identifier.issn1463-9076
dc.identifier.issn1463-9084
dc.identifier.doi10.1039/c8cp03945c
dc.identifier.urihttp://hdl.handle.net/10754/628504
dc.description.abstractResistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types of low-cost solution-processed ReRAMs: one is hybrid nanocomposites with charge-trapping nanoparticles (NPs) embedded in polymer matrix, and the other is hybrid halide perovskite which have been intensively investigated recently for optoelectronic applications. We will review the recent developments on preparation methods, device structures and operation mechanisms. Resistive switching in hybrid materials and composites is ubiquitous because of the abundant existence of charge-trapping defects and interfaces. The future challenges and potential breakthroughs will also be outlined.
dc.description.sponsorshipThe acknowledgements come at the end of an article after the conclusions and before the notes and references.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2018/CP/C8CP03945C#!divAbstract
dc.rightsArchived with thanks to Physical Chemistry Chemical Physics
dc.subjecthalide perovskite
dc.subjectresistive switching memory
dc.subjectfilament
dc.subjectdefects trapping
dc.titleSolution-Processed Resistive Switching Memories based on Hybrid Organic-Inorganic Materials and Composites
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.identifier.journalPhysical Chemistry Chemical Physics
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
dc.contributor.institutionSchool of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, P. R. China
dc.contributor.institutionSchool of Materials Science and Engineering, Nanyang Technological University, Singapore
kaust.personGuan, Xinwei
refterms.dateFOA2018-09-04T06:18:59Z


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