Annealing temperature effects on photoelectrochemical performance of bismuth vanadate thin film photoelectrodes
Saleh, Navid B.
KAUST DepartmentBiological and Environmental Sciences and Engineering (BESE) Division
Electrical Engineering Program
Environmental Nanotechnology Lab
Environmental Science and Engineering Program
KAUST Catalysis Center (KCC)
KAUST Solar Center (KSC)
Physical Science and Engineering (PSE) Division
Water Desalination and Reuse Research Center (WDRC)
Permanent link to this recordhttp://hdl.handle.net/10754/628484
MetadataShow full item record
AbstractThe effects of annealing treatment between 400 °C and 540 °C on crystallization behavior, grain size, electrochemical (EC) and photoelectrochemical (PEC) oxygen evolution reaction (OER) performances of bismuth vanadate (BiVO4) thin films are investigated in this work. The results show that higher temperature leads to larger grain size, improved crystallinity, and better crystal orientation for the BiVO4 thin film electrodes. Under air-mass 1.5 global (AM 1.5) solar light illumination, the BiVO4 thin film prepared at a higher annealing temperature (500–540 °C) shows better PEC OER performance. Also, the OER photocurrent density increased from 0.25 mA cm−2 to 1.27 mA cm−2 and that of the oxidation of sulfite, a hole scavenger, increased from 1.39 to 2.53 mA cm−2 for the samples prepared from 400 °C to 540 °C. Open-circuit photovoltage decay (OCPVD) measurement indicates that BiVO4 samples prepared at the higher annealing temperature have less charge recombination and longer electron lifetime. However, the BiVO4 samples prepared at lower annealing temperature have better EC performance in the absence of light illumination and more electrochemically active surface sites, which are negatively related to electrochemical double-layer capacitance (Cdl). Cdl was 0.0074 mF cm−2 at 400 °C and it decreased to 0.0006 mF cm−2 at 540 °C. The OER and sulfide oxidation are carefully compared and these show that the efficiency of charge transport in the bulk (ηbulk) and on the surface (ηsurface) of the BiVO4 thin film electrode are improved with the increase in the annealing temperature. The mechanism behind the light-condition-dependent role of the annealing treatment is also discussed.
CitationShi L, Zhuo S, Abulikemu M, Mettela G, Palaniselvam T, et al. (2018) Annealing temperature effects on photoelectrochemical performance of bismuth vanadate thin film photoelectrodes. RSC Advances 8: 29179–29188. Available: http://dx.doi.org/10.1039/c8ra04887h.
SponsorsThis project is based upon work supported by the King Abdullah University Science and Technology (KAUST) CCF fund, awarded to Water Desalination and Reuse Center (WDRC). The authors are grateful to other members of the KAUST Environmental Nanotechnology group for their insightful discussions.
PublisherRoyal Society of Chemistry (RSC)
CollectionsArticles; Biological and Environmental Sciences and Engineering (BESE) Division; Environmental Science and Engineering Program; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; KAUST Catalysis Center (KCC); Water Desalination and Reuse Research Center (WDRC); KAUST Solar Center (KSC)
Except where otherwise noted, this item's license is described as This Open Access Article is licensed under a Creative Commons Attribution 3.0 Unported Licence