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dc.contributor.authorAjia, Idris A.
dc.contributor.authorYamashita, Y.
dc.contributor.authorLorenz, K.
dc.contributor.authorMumthaz Muhammed, Mufasila
dc.contributor.authorSpasevski, L.
dc.contributor.authorAlmalawi, Dhaifallah
dc.contributor.authorXu, J.
dc.contributor.authorIizuka, K.
dc.contributor.authorMorishima, Y.
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorWei, Nini
dc.contributor.authorMartin, R. W.
dc.contributor.authorKuramata, A.
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2018-09-03T13:26:15Z
dc.date.available2018-09-03T13:26:15Z
dc.date.issued2018-08-20
dc.identifier.citationAjia IA, Yamashita Y, Lorenz K, Muhammed MM, Spasevski L, et al. (2018) GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. Applied Physics Letters 113: 082102. Available: http://dx.doi.org/10.1063/1.5025178.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.5025178
dc.identifier.urihttp://hdl.handle.net/10754/628471
dc.description.abstractGaN/AlGaN multiple quantum wells (MQWs) are grown on a (2⎯⎯01)-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the (2⎯⎯01)-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.
dc.description.sponsorshipThe authors thank KAUST for its financial support.
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.5025178
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5025178.
dc.subjectLight emitting diodes
dc.subjectPhotoluminescence
dc.subjectQuantum wells
dc.subjectCrystal defects
dc.subjectLuminescence spectroscopy
dc.titleGaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan
dc.contributor.institutionINESC-MN, IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Bobadela LRS, Portugal
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
kaust.personAjia, Idris A.
kaust.personMumthaz Muhammed, Mufasila
kaust.personAlmalawi, Dhaifallah
kaust.personXu, J.
kaust.personAnjum, Dalaver H.
kaust.personWei, Nini
kaust.personRoqan, Iman S.
refterms.dateFOA2018-09-04T12:54:17Z


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