GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
AuthorsAjia, Idris A.
Mumthaz Muhammed, Mufasila
Anjum, Dalaver H.
Martin, R. W.
Roqan, Iman S.
KAUST DepartmentElectron Microscopy
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Permanent link to this recordhttp://hdl.handle.net/10754/628471
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AbstractGaN/AlGaN multiple quantum wells (MQWs) are grown on a (2⎯⎯01)-oriented β-Ga2O3 substrate. The optical and structural characteristics of the MQW structure are compared with those of a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that the MQW structure exhibits higher crystalline quality of well-defined quantum wells when compared to a similar structure grown on sapphire. X-ray diffraction rocking curve and photoluminescence excitation analyses confirm the lower density of dislocation defects in the sample grown on a β-Ga2O3 substrate. A detailed analysis of time-integrated and time-resolved photoluminescence measurements shows that the MQWs grown on a β-Ga2O3 substrate are of higher optical quality. Our work indicates that the (2⎯⎯01)-oriented β-Ga2O3 substrate can be a potential candidate for UV vertical emitting devices.
CitationAjia IA, Yamashita Y, Lorenz K, Muhammed MM, Spasevski L, et al. (2018) GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices. Applied Physics Letters 113: 082102. Available: http://dx.doi.org/10.1063/1.5025178.
SponsorsThe authors thank KAUST for its financial support.
JournalApplied Physics Letters