In-line Tunnel Field Effect Transistor: Drive Current Improvement
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Disruptive Electronic Applications (IDEA) Lab
Integrated Nanotechnology Lab
Materials Science and Engineering Program
KAUST Grant NumberOSR-2015-Sensors-2707
Online Publication Date2018-06-05
Print Publication Date2018
Permanent link to this recordhttp://hdl.handle.net/10754/628445
MetadataShow full item record
AbstractA new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing (SS), and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.
CitationPark W, Hanna AN, Kutbee AT, Hussain MM (2018) In-Line Tunnel Field Effect Transistor: Drive Current Improvement. IEEE Journal of the Electron Devices Society 6: 721–725. Available: http://dx.doi.org/10.1109/JEDS.2018.2844023.
SponsorsThis work was supported by the King Abdullah University of Science and Technology Office of Sponsored Research through Sensor Innovation Initiative Award under Grant OSR-2015-Sensors-2707.
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