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    In-line Tunnel Field Effect Transistor: Drive Current Improvement

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    08372468.pdf
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    Type
    Article
    Authors
    Park, Woojin
    Hanna, Amir cc
    Kutbee, Arwa T. cc
    Hussain, Muhammad Mustafa cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Integrated Disruptive Electronic Applications (IDEA) Lab
    Integrated Nanotechnology Lab
    Materials Science and Engineering Program
    KAUST Grant Number
    OSR-2015-Sensors-2707
    Date
    2018-06-05
    Online Publication Date
    2018-06-05
    Print Publication Date
    2018
    Permanent link to this record
    http://hdl.handle.net/10754/628445
    
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    Abstract
    A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing (SS), and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.
    Citation
    Park W, Hanna AN, Kutbee AT, Hussain MM (2018) In-Line Tunnel Field Effect Transistor: Drive Current Improvement. IEEE Journal of the Electron Devices Society 6: 721–725. Available: http://dx.doi.org/10.1109/JEDS.2018.2844023.
    Sponsors
    This work was supported by the King Abdullah University of Science and Technology Office of Sponsored Research through Sensor Innovation Initiative Award under Grant OSR-2015-Sensors-2707.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    IEEE Journal of the Electron Devices Society
    DOI
    10.1109/JEDS.2018.2844023
    Additional Links
    https://ieeexplore.ieee.org/document/8372468/
    ae974a485f413a2113503eed53cd6c53
    10.1109/JEDS.2018.2844023
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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