In-line Tunnel Field Effect Transistor: Drive Current Improvement
Type
Article
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Disruptive Electronic Applications (IDEA) Lab
Integrated Nanotechnology Lab
Materials Science and Engineering Program
KAUST Grant Number
OSR-2015-Sensors-2707Date
2018-06-05Online Publication Date
2018-06-05Print Publication Date
2018Permanent link to this record
http://hdl.handle.net/10754/628445Metadata
Show full item recordAbstract
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the subthreshold swing (SS), and the intrinsic time delay, etc. The drive current of the in-line TFET is enhanced nearly 7× compared to the conventional TFET. It also shows a significantly reduced subthreshold swing of 37.2 mV/dec.Citation
Park W, Hanna AN, Kutbee AT, Hussain MM (2018) In-Line Tunnel Field Effect Transistor: Drive Current Improvement. IEEE Journal of the Electron Devices Society 6: 721–725. Available: http://dx.doi.org/10.1109/JEDS.2018.2844023.Sponsors
This work was supported by the King Abdullah University of Science and Technology Office of Sponsored Research through Sensor Innovation Initiative Award under Grant OSR-2015-Sensors-2707.Additional Links
https://ieeexplore.ieee.org/document/8372468/Scopus Count
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