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dc.contributor.authorMottram, Alexander D.
dc.contributor.authorPattanasattayavong, Pichaya
dc.contributor.authorIsakov, Ivan
dc.contributor.authorWyatt-Moon, Gwen
dc.contributor.authorFaber, Hendrik
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2018-09-03T13:24:08Z
dc.date.available2018-09-03T13:24:08Z
dc.date.issued2018-06-15
dc.identifier.citationMottram AD, Pattanasattayavong P, Isakov I, Wyatt-Moon G, Faber H, et al. (2018) Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization. AIP Advances 8: 065015. Available: http://dx.doi.org/10.1063/1.5036809.
dc.identifier.issn2158-3226
dc.identifier.doi10.1063/1.5036809
dc.identifier.urihttp://hdl.handle.net/10754/628443
dc.description.abstractThe quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Herein, we study the impact of the surface morphology of three solution-processed high-k metal oxide dielectrics, namely AlO, HfO, and ZrO, on the operating characteristics of InO TFTs. Six different dielectric configurations were produced via single or double-step spin-casting of the various precursor formulations. All layers exhibited high areal capacitance in the range of 200 to 575 nF/cm, hence proving suitable, for application in low-voltage n-channel InO TFTs. Study of the surface topography of the various layers indicates that double spin-cast dielectrics exhibit consistently smoother layer surfaces and yield TFTs with improved operating characteristics manifested, primarily, as an increase in the electron mobility (μ). To this end, μ is found to increase from 1 to 2 cm/Vs for AlO, 1.8 to 6.4 cm/Vs for HfO, and 2.8 to 18.7 cm/Vs for ZrO-based InO TFTs utilizing single and double-layer dielectric, respectively. The proposed method is simple and potentially applicable to other metal oxide dielectrics and semiconductors.
dc.description.sponsorshipA.D.M. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/G037515/1. A.D.M. and P.P. acknowledge Vidyasirimedhi Institute of Science and Technology (VISTEC) for funding and the Frontier Research Center (FRC) of VISTEC for instrumentation support. T.D.A. acknowledges the King Abdullah University of Science and Technology (KAUST) for the financial support.
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/abs/10.1063/1.5036809
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectDielectrics
dc.subjectElectronic transport
dc.subjectSemiconductors
dc.subjectDielectric materials
dc.subjectBipolar transistors
dc.titleElectron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAIP Advances
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom
dc.contributor.institutionDepartment of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand
dc.contributor.institutionClarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, United Kingdom
kaust.personFaber, Hendrik
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-09-06T11:35:14Z
dc.date.published-online2018-06-15
dc.date.published-print2018-06


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All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Except where otherwise noted, this item's license is described as All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).