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dc.contributor.authorZhao, Chao
dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorSubedi, Ram Chandra
dc.contributor.authorLiang, Jian Wei
dc.contributor.authorAlatawi, Abdullah
dc.contributor.authorAlhamoud, Abdullah
dc.contributor.authorEbaid, Mohamed
dc.contributor.authorAlias, Mohd Sharizal
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.identifier.citationZhao C, Alfaraj N, Chandra Subedi R, Liang JW, Alatawi AA, et al. (2018) III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications. Progress in Quantum Electronics. Available:
dc.description.abstractGroup-III nitrides and their alloys feature direct bandgaps covering a broad range of the electromagnetic spectrum, making them a promising material system for various applications, such as solid state lighting, chemical/biological sensing, water splitting, medical diagnostics, and communications. In recent years, the growth of strain and defect-free group-III nitride vertical nanowires has exploded as an area of research. These nanowires, grown on various unconventional substrates, such as silicon and different metals, demonstrate potential advantages over their planar counterparts, including wavelength tunability to the near infrared and reduced efficiency droop. The low-profile and low power consumption of such nanowires also make them viable candidates for emerging applications, such as the Internet of things and artificial intelligence. Herein, we present a comprehensive review on the recent achievements made in the field of III-nitride nanowires. We compare and discuss the growth conditions and mechanisms involved in fabricating these structures via metalorganic chemical vapor deposition and molecular beam epitaxy. How the unique optical, electrical, and thermal properties of these nanowires are correlated with their growth conditions on various unconventional substrates is discussed, along with their respective applications, including light-emitting diodes, lasers, photodetectors, and photoelectrodes. Finally, we detail the remaining obstacles and challenges to fully exploit the potential of III-nitride nanowires for such practical applications.
dc.description.sponsorshipThe authors acknowledge funding support from the King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
dc.publisherElsevier BV
dc.rights©2018 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license ( ).
dc.subjectGaN nanowires
dc.subjectlight-emitting diode
dc.titleIII-Nitride Nanowires on Unconventional Substrates: from Materials to Optoelectronic Device Applications
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Characterization
dc.identifier.journalProgress in Quantum Electronics
dc.eprint.versionPublisher's Version/PDF
kaust.personZhao, Chao
kaust.personAlfaraj, Nasir
kaust.personSubedi, Ram
kaust.personLiang, Jian-Wei
kaust.personAlatawi, Abdullah
kaust.personAlhamoud, Abdullah
kaust.personEbaid, Mohamed
kaust.personAlias, Mohd Sharizal
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.

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©2018 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license (
Except where otherwise noted, this item's license is described as ©2018 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license ( ).