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dc.contributor.authorHe, Xin
dc.contributor.authorZhang, Zehui
dc.contributor.authorZhang, Chenhui
dc.contributor.authorYang, Yang
dc.contributor.authorHu, Ming
dc.contributor.authorGe, Weikun
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2018-09-03T13:19:48Z
dc.date.available2018-09-03T13:19:48Z
dc.date.issued2018-07-03
dc.identifier.citationHe X, Zhang Z, Zhang C, Yang Y, Hu M, et al. (2018) Exploration of exciton behavior in atomically thin WS2 layers by ionic gating. Applied Physics Letters 113: 013104. Available: http://dx.doi.org/10.1063/1.5022327.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.5022327
dc.identifier.urihttp://hdl.handle.net/10754/628382
dc.description.abstractThe photoluminescence spectra of mono- and bilayer WS, gated by the ionic liquid, were systematically studied at 77 K. Interesting phenomena, such as a redshift of the exciton peaks and a change in the spectral weight of the exciton, trion, and biexciton peaks, were observed at intermediate doping levels. By increasing the doping level, all the exciton, trion, and biexciton peaks vanished, which is attributed to the phase-space filling effect and the Coulomb screening effect. The variation in the band structure, which was induced by the quantum-confined Stark effect in both the mono- and bilayer WS, was also studied using first-principle calculations.
dc.description.sponsorshipThis research used the resources of Shaheen II at the King Abdullah University of Science and Technology (KAUST) and was supported by the sensor project (REP/1/2719-01) of the King Abdullah University of Science and Technology (KAUST).
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/abs/10.1063/1.5022327
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5022327.
dc.subjectDoping
dc.subjectTransition metals
dc.subjectExcitons
dc.subjectIonic liquids
dc.subjectAb initio calculations
dc.subjectStark effect
dc.subjectAnyons
dc.subjectDoppler effect
dc.subjectBand structure
dc.subjectLuminescence spectroscopy
dc.titleExploration of exciton behavior in atomically thin WS2 layers by ionic gating
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Mineral Engineering, Division of Materials Science and Engineering, Faculty of Georesources and Materials Engineering, RWTH Aachen University, 52064 Aachen, Germany
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
dc.contributor.institutionSchool of Physics, Peking University, Beijing 100871, People's Republic of China
kaust.personHe, Xin
kaust.personZhang, Zehui
kaust.personZhang, Chenhui
kaust.personZhang, Xixiang
kaust.grant.numberREP/1/2719-01
refterms.dateFOA2018-09-11T13:24:54Z
dc.date.published-online2018-07-03
dc.date.published-print2018-07-02


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