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dc.contributor.authorVenkatraman, Vishak
dc.contributor.authorFriedlein, Jacob T.
dc.contributor.authorGiovannitti, Alexander
dc.contributor.authorMaria, Iuliana P.
dc.contributor.authorMcCulloch, Iain
dc.contributor.authorMcLeod, Robert R.
dc.contributor.authorRivnay, Jonathan
dc.date.accessioned2018-09-03T13:19:10Z
dc.date.available2018-09-03T13:19:10Z
dc.date.issued2018-07-04
dc.identifier.citationVenkatraman V, Friedlein JT, Giovannitti A, Maria IP, McCulloch I, et al. (2018) Subthreshold Operation of Organic Electrochemical Transistors for Biosignal Amplification. Advanced Science 5: 1800453. Available: http://dx.doi.org/10.1002/advs.201800453.
dc.identifier.issn2198-3844
dc.identifier.doi10.1002/advs.201800453
dc.identifier.urihttp://hdl.handle.net/10754/628372
dc.description.abstractWith a host of new materials being investigated as active layers in organic electrochemical transistors (OECTs), several advantageous characteristics can be utilized to improve transduction and circuit level performance for biosensing applications. Here, the subthreshold region of operation of one recently reported high performing OECT material, poly(2-(3,3′-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-[2,2′-bithiophen]-5-yl)thieno[3,2-b]thiophene), p(g2T-TT) is investigated. The material's high subthreshold slope (SS) is exploited for high voltage gain and low power consumption. An ≈5× improvement in voltage gain (AV) for devices engineered for equal output current and 370× lower power consumption in the subthreshold region, in comparison to operation in the higher transconductance (g m), superthreshold region usually reported in the literature, are reported. Electrophysiological sensing is demonstrated using the subthreshold regime of p(g2T-TT) devices and it is suggested that operation in this regime enables low power, enhanced sensing for a broad range of bioelectronic applications. Finally, the accessibility of the subthreshold regime of p(g2T-TT) is evaluated in comparison with the prototypical poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and the role of material design in achieving favorable properties for subthreshold operation is discussed.
dc.description.sponsorshipThe authors acknowledge the staff support of the Northwestern's microfabrication facility (NUFAB). This work utilized the Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is partially supported by the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (Grant No. NSF ECCS-1542205), the Materials Research Science and Engineering Center (Grant No. DMR-1720139), the State of Illinois, and Northwestern University. The authors also wish to acknowledge Mary J. Donahue for her assistance with the fabrication of the PEDOT:PSS-based OECT reported here. J.T.F. and R.R.M. acknowledge funding from the National Science Foundation (Grant No. ECCS 1509909).
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/full/10.1002/advs.201800453
dc.rightsThis is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleSubthreshold Operation of Organic Electrochemical Transistors for Biosignal Amplification
dc.typeArticle
dc.contributor.departmentChemical Science Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Science
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionSimpson Querrey Institute for BioNanotechnology; Northwestern University; Chicago IL 60611 USA
dc.contributor.institutionDepartment of Biomedical Engineering; Northwestern University; 2145 Sheridan Road Evanston IL 60208 USA
dc.contributor.institutionDepartment of Electrical; Computer, and Energy Engineering; University of Colorado; Boulder CO 80309-0425 USA
dc.contributor.institutionDepartment of Chemistry; Imperial College London; London SW7 2AZ UK
kaust.personMcCulloch, Iain
refterms.dateFOA2018-09-12T06:36:10Z
dc.date.published-online2018-07-04
dc.date.published-print2018-08


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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Except where otherwise noted, this item's license is described as This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.