Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Abstract
We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO gate dielectric and a hybrid multilayer channel consisting of the heterojunction InO/ZnO and the organic polymer

Citation
Chaudhry MU, Tetzner K, Lin Y-H, Nam S, Pearson C, et al. (2018) Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors. ACS Applied Materials & Interfaces 10: 18445–18449. Available: http://dx.doi.org/10.1021/acsami.8b06031.

Acknowledgements
This work is supported by a Durham Junior Research Fellowship COFUNDed between Durham University and the European Union (grant agreement no. 609412). M.U.C., C.P., C.G., and M.C.P thank the Institute of Advanced Study, Durham University for their support. K.T., Y.H.L., and T.D.A. acknowledge financial support from the People Programme (Marie Curie Actions) of the European Union’s Framework Programme Horizon 2020: ‘‘Flexible Complementary Hybrid Integrated Circuits’’ (FlexCHIC), grant agreement no. 658563. D.D.C.B. thanks the University of Oxford for start-up funding (grant no. DK3004), including a postdoctoral research fellowship for S.N.

Publisher
American Chemical Society (ACS)

Journal
ACS Applied Materials & Interfaces

DOI
10.1021/acsami.8b06031

Additional Links
https://pubs.acs.org/doi/10.1021/acsami.8b06031

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