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    p-Doping of Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers for High-Performance Transistors and Organic Solar Cells

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    Name:
    N.Wijeyasinghe et al., Adv. Funct. Mater. 2018-1802055.pdf
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    1.834Mb
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    Type
    Article
    Authors
    Wijeyasinghe, Nilushi
    Eisner, Flurin
    Tsetseris, Leonidas
    Lin, Yen-Hung
    Seitkhan, Akmaral cc
    Li, Jinhua
    Yan, Feng
    Solomeshch, Olga
    Tessler, Nir
    Patsalas, Panos
    Anthopoulos, Thomas D. cc
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2018-06-03
    Online Publication Date
    2018-06-03
    Print Publication Date
    2018-08
    Permanent link to this record
    http://hdl.handle.net/10754/628266
    
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    Abstract
    The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier-selective interlayers in large area opto/electronics. Herein the simple, economical, and effective p-doping of one of the most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C60F48 is reported. Theoretical calculations combined with experimental measurements are used to elucidate the electronic band structure and density of states of the constituent materials and their blends. Obtained results reveal that although the bandgap (3.85 eV) and valence band maximum (−5.4 eV) of CuSCN remain unaffected, its Fermi energy shifts toward the valence band edge upon C60F48 addition—an observation consistent with p-type doping. Transistor measurements confirm the p-doping effect while revealing a tenfold increase in the channel's hole mobility (up to 0.18 cm2 V−1 s−1), accompanied by a dramatic improvement in the transistor's bias-stress stability. Application of CuSCN:C60F48 as the hole-transport layer (HTL) in organic photovoltaics yields devices with higher power conversion efficiency, improved fill factor, higher shunt resistance, and lower series resistance and dark current, as compared to control devices based on pristine CuSCN or commercially available HTLs.
    Citation
    Wijeyasinghe N, Eisner F, Tsetseris L, Lin Y-H, Seitkhan A, et al. (2018) p-Doping of Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers for High-Performance Transistors and Organic Solar Cells. Advanced Functional Materials 28: 1802055. Available: http://dx.doi.org/10.1002/adfm.201802055.
    Sponsors
    N.W. and T.D.A. acknowledge financial support from the European Research Council (ERC) AMPRO (Grant No. 280221) and the Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/L504786/1). The authors acknowledge the King Abdullah University of Science and Technology (KAUST) for the financial support. L.T. acknowledges support for the computational time granted from the Greek Research & Technology Network (GRNET) in the National HPC facility—ARIS—under project pr004034-STEM. O.S. acknowledges the support of the Israel Ministry of Science, the Center for Absorption in Science of the Ministry of Immigrant Absorption.
    Publisher
    Wiley
    Journal
    Advanced Functional Materials
    DOI
    10.1002/adfm.201802055
    Additional Links
    https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201802055
    ae974a485f413a2113503eed53cd6c53
    10.1002/adfm.201802055
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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