Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
Kang, Chun Hong
Albadri, Abdulrahman M.
Alyamani, Ahmed Y.
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/628041
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AbstractThere have been recent research advances in AlGaN-based self-assembled nanowires (NWs) as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted molecular beam epitaxy. We review the basic growth kinetics on various foundry-compatible-metal/silicon-based substrates and the epistructure design for UV devices. We highlight the use of diffusion-barrier-metal thin film on silicon substrate as a solution to enhance device performance. NWs offer the opportunity to mitigate the detrimental quantum-confined Stark effect (QCSE), which lowers the recombination rate thereby reducing the device efficiency. On the other hand, the polarization-induced doping from the graded composition along NWs can be advantageous for eluding the inefficient doping in AlGaN-based UV devices. Sidewall surface states and the associate passivation treatment, as well as the use of ultrafast electron-microscopy characterization, are crucial investigations in shedding light on device performance under the influence of surface dangling bonds. For investigating the electrical performance of individual NWs and NWs light-emitting diode as a single entity, recent reports based on conductive atomic force microscopy measurements provide fast-prototyping in-process pass-fail evaluation and a means of improving growth for high-performance devices. Stress tests of NWs devices, crucial for reliable operation, are also discussed. Beyond applications in LEDs, an AlGaN-based NWs solar-blind photodetector demonstrated leveraging on the dislocation-free active region, reduced QCSE, enhanced light absorption, and tunable-composition features. The review opens pathways and offers insights for practical realization of AlGaN-based axial NWs devices on scalable and low-cost silicon substrates.
CitationMin, J.-W., Priante, D., Tangi, M., Liu, G., Kang, C. H., Prabaswara, A., … Ooi, B. S. (2018). Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices. Journal of Nanophotonics, 12(04), 1. doi:10.1117/1.jnp.12.043511
SponsorsWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77.
PublisherSPIE-Intl Soc Optical Eng
JournalJournal of Nanophotonics