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    Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires

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    Type
    Article
    Authors
    Priante, Davide cc
    Elafandy, Rami T. cc
    Prabaswara, Aditya cc
    Janjua, Bilal cc
    Zhao, Chao cc
    Alias, Mohd Sharizal cc
    Tangi, Malleswararao cc
    Alaskar, Yazeed
    Albadri, Abdulrahman M.
    Alyamani, Ahmed Y.
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Photonics Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Date
    2018-07-05
    Online Publication Date
    2018-07-05
    Print Publication Date
    2018-07-07
    Permanent link to this record
    http://hdl.handle.net/10754/628037
    
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    Abstract
    The diode junction temperature (Tj) of light emitting devices is a key parameter affecting the efficiency, output power, and reliability. Herein, we present experimental measurements of the Tj on ultraviolet (UV) AlGaN nanowire (NW) light emitting diodes (LEDs), grown on a thin metal-film and silicon substrate using the diode forward voltage and electroluminescence peak-shift methods. The forward-voltage vs temperature curves show temperature coefficient dVF/dT values of −6.3 mV/°C and −5.2 mV/°C, respectively. The significantly smaller Tj of ∼61 °C is measured for the sample on the metal substrate, as compared to that of the sample on silicon (∼105 °C), at 50 mA, which results from the better electrical-to-optical energy conversion and the absence of the thermally insulating SiNx at the NWs/silicon interface. In contrast to the reported higher Tj values for AlGaN planar LEDs exhibiting low lateral and vertical heat dissipation, we obtained a relatively lower Tj at similar values of injection current. Lower temperatures are also achieved using an Infrared camera, confirming that the Tj reaches higher values than the overall device temperature. Furthermore, the heat source density is simulated and compared to experimental data. This work provides insight into addressing the high junction temperature limitations in light-emitters, by using a highly conductive thin metal substrate, and it aims to realize UV AlGaN NWs for high power and reliable emitting devices.
    Citation
    Priante, D., Elafandy, R. T., Prabaswara, A., Janjua, B., Zhao, C., Alias, M. S., … Ooi, B. S. (2018). Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires. Journal of Applied Physics, 124(1), 015702. doi:10.1063/1.5026650
    Sponsors
    We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77.
    Publisher
    AIP Publishing
    Journal
    Journal of Applied Physics
    DOI
    10.1063/1.5026650
    Additional Links
    https://aip.scitation.org/doi/10.1063/1.5026650
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.5026650
    Scopus Count
    Collections
    Articles; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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