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dc.contributor.authorZhao, Chao
dc.contributor.authorEbaid, Mohamed
dc.contributor.authorZhang, Huafan
dc.contributor.authorPriante, Davide
dc.contributor.authorJanjua, Bilal
dc.contributor.authorZhang, Daliang
dc.contributor.authorWei, Nini
dc.contributor.authorAlhamoud, Abdullah
dc.contributor.authorShakfa, M. Khaled
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2018-06-03T08:15:54Z
dc.date.available2018-06-03T08:15:54Z
dc.date.issued2018-05-29
dc.identifier.citationZhao C, Ebaid M, Zhang H, Priante D, Janjua B, et al. (2018) Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters. Nanoscale. Available: http://dx.doi.org/10.1039/c8nr02615g.
dc.identifier.issn2040-3364
dc.identifier.issn2040-3372
dc.identifier.doi10.1039/c8nr02615g
dc.identifier.urihttp://hdl.handle.net/10754/628010
dc.description.abstractP-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding, C/M-20000-12-001-77.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2018/NR/C8NR02615G#!divAbstract
dc.rightsArchived with thanks to Nanoscale
dc.titleQuantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentImaging and Characterization Core Lab
dc.identifier.journalNanoscale
dc.eprint.versionPost-print
kaust.personZhao, Chao
kaust.personEbaid, Mohamed
kaust.personZhang, Huafan
kaust.personPriante, Davide
kaust.personJanjua, Bilal
kaust.personZhang, Daliang
kaust.personWei, Nini
kaust.personAlhamoud, Abdullah
kaust.personShakfa, M. Khaled
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
kaust.grant.numberC/M-20000-12-001-77


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