Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Imaging and Characterization Core Lab
Permanent link to this recordhttp://hdl.handle.net/10754/628007
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AbstractHigh-quality InxGa1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (−201)-oriented β-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (−201)-oriented β-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.
CitationMuhammed MM, Xu J, Wehbe N, Roqan IS (2018) Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3 for bright vertical light emitting diodes. Optics Express 26: 14869. Available: http://dx.doi.org/10.1364/oe.26.014869.
SponsorsThe samples were purchased from Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan. The author would like to thank the growers Mr. Yoshihiro Yamashita, Mr. Higuchi Mitsuhito, and Mr. Akito Kuramata, president and CEO of Novel Crystal Technology, Inc. Japan. The authors thanks KAUST for the finance support.
PublisherThe Optical Society