Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode
Shaikh, Sohail F.
Lee, Sang Kyung
Lee, Byoung Hun
Hussain, Muhammad Mustafa
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2018-06-05
Print Publication Date2018-08-10
Permanent link to this recordhttp://hdl.handle.net/10754/627930
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AbstractWe report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.
CitationPark W, Shaikh SF, Min J, Lee SK, Lee BH, et al. (2018) Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aac4b9.
SponsorsThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. Sensor Innovation Initiative OSR-2015-Sensors-2707 and KAUST-KFUPM Special Initiative OSR2016-KKI 2880.
Except where otherwise noted, this item's license is described as This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6528/aac4b9
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