Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication
AuthorsShamim, Md. Hosne Mobarok
Oubei, Hassan M.
Ng, Tien Khee
Ooi, Boon S.
Khan, Mohammed Zahed Mustafa
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant NumberBAS/1/1614-01-01
Online Publication Date2018-05-07
Print Publication Date2018
Permanent link to this recordhttp://hdl.handle.net/10754/627908
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AbstractFirst report on significant performance improvement of 450 nm blue edge-emitting laser in terms of optical linewidth (~6.5 times), modulation bandwidth (~16%) and SMSR (~7.4 times) by employing self-injection locking scheme.
CitationShamim MHM, Shemis MA, Shen C, Oubei HM, Ng TK, et al. (2018) Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication. Conference on Lasers and Electro-Optics. Available: http://dx.doi.org/10.1364/cleo_at.2018.jtu2a.29.
SponsorsThe authors gratefully acknowledge the support from KFUPM through the research grant KAUST004, and KAUST through baseline funding BAS/1/1614-01-01. The authors also acknowledge funding support from KACST via KACST-TIC in SSL.
PublisherThe Optical Society