Show simple item record

dc.contributor.authorYan, Long
dc.contributor.authorZhang, Yuantao
dc.contributor.authorHan, Xu
dc.contributor.authorDeng, Gaoqiang
dc.contributor.authorLi, Pengchong
dc.contributor.authorYu, Ye
dc.contributor.authorChen, Liang
dc.contributor.authorLi, Xiaohang
dc.contributor.authorSong, Junfeng
dc.date.accessioned2018-05-07T07:36:25Z
dc.date.available2018-05-07T07:36:25Z
dc.date.issued2018-05-03
dc.identifier.citationYan L, Zhang Y, Han X, Deng G, Li P, et al. (2018) Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Applied Physics Letters 112: 182104. Available: http://dx.doi.org/10.1063/1.5023521.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.5023521
dc.identifier.urihttp://hdl.handle.net/10754/627766
dc.description.abstractPolarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.
dc.description.sponsorshipThis work was supported by the National Key Research and Development Program (No. 2016YFB0400103), the National Natural Science Foundation of China (Nos. 61674068 and 61734001), and the Science and Technology Developing Project of Jilin Province (20150519004JH, 20160101309JC, and 20170204045GX).
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.5023521
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5023521.
dc.subjectDoping
dc.subjectPiezoelectricity
dc.subjectLight emitting diodes
dc.subjectMultilayers
dc.subjectSemiconductor device fabrication
dc.subjectElectron densities of states
dc.titlePolarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
kaust.personLi, Xiaohang
refterms.dateFOA2019-05-03T00:00:00Z
dc.date.published-online2018-05-03
dc.date.published-print2018-04-30


Files in this item

Thumbnail
Name:
1.5023521.pdf
Size:
1.042Mb
Format:
PDF
Description:
Published version

This item appears in the following Collection(s)

Show simple item record