Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition
Type
ArticleAuthors
Yan, LongZhang, Yuantao
Han, Xu
Deng, Gaoqiang
Li, Pengchong
Yu, Ye
Chen, Liang
Li, Xiaohang

Song, Junfeng
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Advanced Semiconductor Laboratory
Date
2018-05-03Online Publication Date
2018-05-03Print Publication Date
2018-04-30Permanent link to this record
http://hdl.handle.net/10754/627766
Metadata
Show full item recordAbstract
Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.Citation
Yan L, Zhang Y, Han X, Deng G, Li P, et al. (2018) Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Applied Physics Letters 112: 182104. Available: http://dx.doi.org/10.1063/1.5023521.Sponsors
This work was supported by the National Key Research and Development Program (No. 2016YFB0400103), the National Natural Science Foundation of China (Nos. 61674068 and 61734001), and the Science and Technology Developing Project of Jilin Province (20150519004JH, 20160101309JC, and 20170204045GX).Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
https://aip.scitation.org/doi/10.1063/1.5023521ae974a485f413a2113503eed53cd6c53
10.1063/1.5023521