Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Advanced Semiconductor Laboratory
Online Publication Date2018-05-03
Print Publication Date2018-04-30
Permanent link to this recordhttp://hdl.handle.net/10754/627766
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AbstractPolarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.
CitationYan L, Zhang Y, Han X, Deng G, Li P, et al. (2018) Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Applied Physics Letters 112: 182104. Available: http://dx.doi.org/10.1063/1.5023521.
SponsorsThis work was supported by the National Key Research and Development Program (No. 2016YFB0400103), the National Natural Science Foundation of China (Nos. 61674068 and 61734001), and the Science and Technology Developing Project of Jilin Province (20150519004JH, 20160101309JC, and 20170204045GX).
JournalApplied Physics Letters