Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators
Kim, Moon J.
Alshareef, Husam N.
Gnade, Bruce E.
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Thin Films & Characterization
Online Publication Date2018-04-14
Print Publication Date2018-07
Permanent link to this recordhttp://hdl.handle.net/10754/627635
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AbstractThe thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.
CitationZhang B, Zheng T, Wang Q, Guo Z, Kim MJ, et al. (2018) Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators. Scripta Materialia 152: 36–39. Available: http://dx.doi.org/10.1016/j.scriptamat.2018.03.040.
SponsorsThe research was partially financially supported by the University of Texas at Dallas. The authors acknowledge Dr. Gordon Pollock, Mr. Wallace Martin and Mr. Zane Borg for help with thin-film preparation.