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dc.contributor.authorZhang, Qingyun
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2018-04-24T06:46:18Z
dc.date.available2018-04-24T06:46:18Z
dc.date.issued2018-04-16
dc.identifier.citationZhang Q, Schwingenschlögl U (2018) Rashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructures. Physical Review B 97. Available: http://dx.doi.org/10.1103/PhysRevB.97.155415.
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.doi10.1103/PhysRevB.97.155415
dc.identifier.urihttp://hdl.handle.net/10754/627608
dc.description.abstractUsing first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.155415
dc.rightsArchived with thanks to Phys. Rev. B
dc.titleRashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructures
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
kaust.personZhang, Qingyun
kaust.personSchwingenschlögl, Udo
refterms.dateFOA2018-06-14T04:25:34Z


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