Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Type
PreprintAuthors
Mohammed, Hanan
Corte-León, Hector
Ivanov, Yurii P.

Lopatin, Sergei

Moreno, Julian A.
Chuvilin, Andrey

Salimath, Akshaykumar
Manchon, Aurelien

Kazakova, Olga
Kosel, Jürgen

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Electron Microscopy
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Spintronics Theory Group
Date
2018-04-18Permanent link to this record
http://hdl.handle.net/10754/627600
Metadata
Show full item recordAbstract
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.Citation
Mohammed, H., Corte-León, H., Ivanov, Y. P., Lopatin, S., Moreno, J. A., Chuvilin, A., ... & Kosel, J. (2018). Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications. arXiv preprint arXiv:1804.06616.Publisher
arXivarXiv
1804.06616Additional Links
http://arxiv.org/abs/1804.06616v1http://arxiv.org/pdf/1804.06616v1