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    Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

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    1804.06616.pdf
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    1.862Mb
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    PDF
    Description:
    Preprint
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    Type
    Preprint
    Authors
    Mohammed, Hanan cc
    Corte-León, Hector
    Ivanov, Yurii P. cc
    Lopatin, Sergei cc
    Moreno, Julian A.
    Chuvilin, Andrey cc
    Salimath, Akshaykumar
    Manchon, Aurelien cc
    Kazakova, Olga
    Kosel, Jürgen cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Electron Microscopy
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensing, Magnetism and Microsystems Lab
    Spintronics Theory Group
    Date
    2018-04-18
    Permanent link to this record
    http://hdl.handle.net/10754/627600
    
    Metadata
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    Abstract
    A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
    Citation
    Mohammed, H., Corte-León, H., Ivanov, Y. P., Lopatin, S., Moreno, J. A., Chuvilin, A., ... & Kosel, J. (2018). Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications. arXiv preprint arXiv:1804.06616.
    Publisher
    arXiv
    arXiv
    1804.06616
    Additional Links
    http://arxiv.org/abs/1804.06616v1
    http://arxiv.org/pdf/1804.06616v1
    Collections
    Preprints; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Spintronics Theory Group; Electrical and Computer Engineering Program; Material Science and Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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