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dc.contributor.authorShen, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorLee, Changmin
dc.contributor.authorNakamura, Shuji
dc.contributor.authorSpeck, James S.
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEl-Desouki, Munir M.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2018-04-16T11:27:44Z
dc.date.available2018-04-16T11:27:44Z
dc.date.issued2018-02-14
dc.identifier.citationShen C, Ng TK, Lee C, Nakamura S, Speck JS, et al. (2018) Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express 26: A219. Available: http://dx.doi.org/10.1364/OE.26.00A219.
dc.identifier.issn1094-4087
dc.identifier.doi10.1364/OE.26.00A219
dc.identifier.urihttp://hdl.handle.net/10754/627536
dc.description.abstractGaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.
dc.description.sponsorshipKing Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008 and KACST-KAUST-UCSB Solid-State Lighting Program); King Abdullah University of Science and Technology (KAUST) (baseline funding, BAS/1/1614-01-01, KAUST funding KCR/1/2081-01-01, and GEN/1/6607-01-01, as well as KAUST-KFUPM Special Initiative (KKI) Program, REP/1/2878-01-01).
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-26-6-A219
dc.rights© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
dc.rights.urihttps://doi.org/10.1364/OA_License_v1
dc.titleSemipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalOptics Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara (UCSB), Santa Barbara, CA, 93106, , United States
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh, 11442, , Saudi Arabia
kaust.personShen, Chao
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
kaust.grant.numberKCR/1/2081-01-01
kaust.grant.numberGEN/1/6607-01-01
kaust.grant.numberREP/1/2878-01-01
refterms.dateFOA2018-06-14T05:50:58Z


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