Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications
Ng, Tien Khee
Speck, James S.
DenBaars, Steven P.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
MetadataShow full item record
AbstractGaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.
CitationShen C, Ng TK, Lee C, Nakamura S, Speck JS, et al. (2018) Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express 26: A219. Available: http://dx.doi.org/10.1364/OE.26.00A219.
SponsorsKing Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008 and KACST-KAUST-UCSB Solid-State Lighting Program); King Abdullah University of Science and Technology (KAUST) (baseline funding, BAS/1/1614-01-01, KAUST funding KCR/1/2081-01-01, and GEN/1/6607-01-01, as well as KAUST-KFUPM Special Initiative (KKI) Program, REP/1/2878-01-01).
PublisherThe Optical Society