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dc.contributor.authorYandjah, L.
dc.contributor.authorBechiri, L.
dc.contributor.authorBenabdeslem, M.
dc.contributor.authorBenslim, N.
dc.contributor.authorAmara, A.
dc.contributor.authorPortier, X.
dc.contributor.authorBououdina, M.
dc.contributor.authorZiani, Ahmed
dc.date.accessioned2018-04-16T11:27:44Z
dc.date.available2018-04-16T11:27:44Z
dc.date.issued2018-04-03
dc.identifier.citationYandjah L, Bechiri L, Benabdeslem M, Benslim N, Amara A, et al. (2018) Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation. Chinese Journal of Physics. Available: http://dx.doi.org/10.1016/j.cjph.2018.03.028.
dc.identifier.issn0577-9073
dc.identifier.doi10.1016/j.cjph.2018.03.028
dc.identifier.urihttp://hdl.handle.net/10754/627532
dc.description.abstractPolycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0577907318300480
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Chinese Journal of Physics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Chinese Journal of Physics, [, , (2018-04-03)] DOI: 10.1016/j.cjph.2018.03.028 . © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectChalcogenides
dc.subjectOptical materials
dc.subjectSemiconductors
dc.subjectThin films
dc.subjecttransmission electron microscopy
dc.titlePhotoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation
dc.typeArticle
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalChinese Journal of Physics
dc.eprint.versionPost-print
dc.contributor.institutionLPMR, Department of Material Sciences, Faculty of Science and Technology, Univ-Souk-Ahras 41000. Algeria
dc.contributor.institution(LESIMS)-(LEREC), Département de Physique, Faculté des Sciences, Univ-Badji Mokhtar, Annaba, Algérie
dc.contributor.institutionCIMAP, Centre de recherche sur les ions, les matériaux et la photonique, CEA, UMR 6252 CNRS, ENSICAEN, UCBN, 6-Boulevard du Maréchal Juin, 14050 Caen cedex, France.
dc.contributor.institutionDepartment of Physics, College of Science, University of Bahrain, PO Box 32038, Kingdom of Bahrain.
kaust.personZiani, Ahmed
refterms.dateFOA2018-06-14T05:51:16Z
dc.date.published-online2018-04-03
dc.date.published-print2018-06


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