Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation
Online Publication Date2018-04-03
Print Publication Date2018-06
Permanent link to this recordhttp://hdl.handle.net/10754/627532
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AbstractPolycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.
CitationYandjah L, Bechiri L, Benabdeslem M, Benslim N, Amara A, et al. (2018) Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation. Chinese Journal of Physics. Available: http://dx.doi.org/10.1016/j.cjph.2018.03.028.
JournalChinese Journal of Physics