Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation
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ArticleAuthors
Yandjah, L.Bechiri, L.
Benabdeslem, M.
Benslim, N.
Amara, A.
Portier, X.
Bououdina, M.
Ziani, Ahmed

Date
2018-04-03Permanent link to this record
http://hdl.handle.net/10754/627532
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Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.Citation
Yandjah L, Bechiri L, Benabdeslem M, Benslim N, Amara A, et al. (2018) Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation. Chinese Journal of Physics. Available: http://dx.doi.org/10.1016/j.cjph.2018.03.028.Publisher
Elsevier BVJournal
Chinese Journal of PhysicsISSN
0577-9073Additional Links
http://www.sciencedirect.com/science/article/pii/S0577907318300480ae974a485f413a2113503eed53cd6c53
10.1016/j.cjph.2018.03.028