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dc.contributor.authorLien, Der-Hsien
dc.contributor.authorAmani, Matin
dc.contributor.authorDesai, Sujay B.
dc.contributor.authorAhn, Geun Ho
dc.contributor.authorHan, Kevin
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorAger, Joel W.
dc.contributor.authorWu, Ming C.
dc.contributor.authorJavey, Ali
dc.date.accessioned2018-04-16T11:27:43Z
dc.date.available2018-04-16T11:27:43Z
dc.date.issued2018-03-26
dc.identifier.citationLien D-H, Amani M, Desai SB, Ahn GH, Han K, et al. (2018) Large-area and bright pulsed electroluminescence in monolayer semiconductors. Nature Communications 9. Available: http://dx.doi.org/10.1038/s41467-018-03218-8.
dc.identifier.issn2041-1723
dc.identifier.pmid29581419
dc.identifier.doi10.1038/s41467-018-03218-8
dc.identifier.urihttp://hdl.handle.net/10754/627520
dc.description.abstractTransition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.
dc.description.sponsorshipWe thank A.B. Sachid for advice on device simulations. Device fabrication and characterization were funded by the National Science Foundation (NSF) under program number 1623038. Materials growth was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under contract no.DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). S.B.D. acknowledges the Lam Research Graduate Fellowship.
dc.publisherSpringer Nature
dc.relation.urlhttps://www.nature.com/articles/s41467-018-03218-8
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleLarge-area and bright pulsed electroluminescence in monolayer semiconductors
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentNano Energy Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Communications
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, , United States
dc.contributor.institutionElectrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, , United States
kaust.personHe, Jr-Hau
refterms.dateFOA2018-06-14T04:20:53Z
dc.date.published-online2018-03-26
dc.date.published-print2018-12


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This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Except where otherwise noted, this item's license is described as This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.