Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes
Ng, Tien Khee
Speck, James S.
DenBaars, Steven P.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant NumberBAS/1/1614-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/627518
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AbstractThe challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.
CitationShen C, Lee C, Ng TK, Speck JS, Nakamura S, et al. (2017) Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes. 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). Available: http://dx.doi.org/10.1109/CLEOPR.2017.8119071.
SponsorsWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB solid state lighting program (SSLP). This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).
Conference/Event name2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017