Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes
Type
Conference PaperAuthors
Shen, Chao
Lee, Changmin
Ng, Tien Khee

Speck, James S.
Nakamura, Shuji
DenBaars, Steven P.
Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
KAUST Grant Number
BAS/1/1614-01-01Date
2017-11-30Online Publication Date
2017-11-30Print Publication Date
2017-07Permanent link to this record
http://hdl.handle.net/10754/627518
Metadata
Show full item recordAbstract
The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.Citation
Shen C, Lee C, Ng TK, Speck JS, Nakamura S, et al. (2017) Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes. 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). Available: http://dx.doi.org/10.1109/CLEOPR.2017.8119071.Sponsors
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB solid state lighting program (SSLP). This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).Conference/Event name
2017 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2017Additional Links
http://ieeexplore.ieee.org/abstract/document/8119071/ae974a485f413a2113503eed53cd6c53
10.1109/CLEOPR.2017.8119071