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dc.contributor.authorZhou, Guangnan
dc.contributor.authorLee, Kwang Hong
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorZhang, Qiang
dc.contributor.authorZhang, Xixiang
dc.contributor.authorTan, Chuan Seng
dc.contributor.authorXia, Guangrui
dc.date.accessioned2018-04-16T11:27:43Z
dc.date.available2018-04-16T11:27:43Z
dc.date.issued2018-04-03
dc.identifier.citationZhou G, Lee KH, Anjum DH, Zhang Q, Zhang X, et al. (2018) Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion. Optical Materials Express 8: 1117. Available: http://dx.doi.org/10.1364/OME.8.001117.
dc.identifier.issn2159-3930
dc.identifier.doi10.1364/OME.8.001117
dc.identifier.urihttp://hdl.handle.net/10754/627517
dc.description.abstractGe-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.
dc.description.sponsorshipNatural Science and Engineering Research Council of Canada (NSERC); National Research Foundation Singapore through the Singapore MIT Alliance for Research and Technology's Low Energy Electronic Systems (LEES) IRG, Competitive Research Program (NRF-CRP12-2013-04); Innovation Grant from SMART Innovation Centre.Dr. Mario Beaudoin from the Advanced Nanofabrication Facility at the University of British Columbia is acknowledged for the training in HRXRD and EPD measurements and helpful discussions.
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-8-5-1117
dc.rights© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
dc.rights.urihttps://doi.org/10.1364/OA_License_v1
dc.titleImpacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalOptical Materials Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Materials Engineering, University of British Columbia, 309-6350 Stores Rd., Vancouver, BC, V6T1Z4, , Canada
dc.contributor.institutionLow Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, , Singapore
dc.identifier.arxividarXiv:1712.05468
kaust.personAnjum, Dalaver H.
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
dc.versionv1
refterms.dateFOA2018-06-14T04:21:10Z
dc.date.published-online2018-04-03
dc.date.published-print2018-05-01
dc.date.posted2017-12-14


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