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dc.contributor.authorGarud, Siddhartha
dc.contributor.authorGampa, Nikhil
dc.contributor.authorAllen, Thomas
dc.contributor.authorKotipalli, Ratan
dc.contributor.authorFlandre, Denis
dc.contributor.authorBatuk, Maria
dc.contributor.authorHadermann, Joke
dc.contributor.authorMeuris, Marc
dc.contributor.authorPoortmans, Jef
dc.contributor.authorSmets, Arno
dc.contributor.authorVermang, Bart
dc.date.accessioned2018-04-15T07:13:36Z
dc.date.available2018-04-15T07:13:36Z
dc.date.issued2018-02-27
dc.identifier.citationGarud S, Gampa N, Allen TG, Kotipalli R, Flandre D, et al. (2018) Surface Passivation of CIGS Solar Cells Using Gallium Oxide. physica status solidi (a): 1700826. Available: http://dx.doi.org/10.1002/pssa.201700826.
dc.identifier.issn1862-6300
dc.identifier.doi10.1002/pssa.201700826
dc.identifier.urihttp://hdl.handle.net/10754/627470
dc.description.abstractThis work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
dc.description.sponsorshipThe work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201700826/full
dc.relation.urlhttps://zenodo.org/record/1451663/files/Gallium_oxide_CIGS_Garud_submitted.pdf
dc.relation.urlhttps://zenodo.org/record/1451663/files/Gallium_oxide_CIGS_Garud_submitted.pdf
dc.relation.urlhttps://zenodo.org/record/1451663/files/Gallium_oxide_CIGS_Garud_submitted.pdf
dc.relation.urlhttps://zenodo.org/record/1451663/files/Gallium_oxide_CIGS_Garud_submitted.pdf
dc.rightsThis is the peer reviewed version of the following article: Surface Passivation of CIGS Solar Cells Using Gallium Oxide, which has been published in final form at http://doi.org/10.1002/pssa.201700826. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.rightsThis file is an open access version redistributed from: https://zenodo.org/record/1451663/files/Gallium_oxide_CIGS_Garud_submitted.pdf
dc.titleSurface Passivation of CIGS Solar Cells Using Gallium Oxide
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalphysica status solidi (a)
dc.rights.embargodate2019-02-27
dc.eprint.versionPost-print
dc.contributor.institutionDelft University of Technology; 2628 CD Delft The Netherlands
dc.contributor.institutionImec - Partner in Solliance; 3000 Leuven Belgium
dc.contributor.institutionHelmholtz Zentrum Berlin; 12489 Berlin Germany
dc.contributor.institutionAustralian National University; Canberra ACT 0200 Australia
dc.contributor.institutionUniversité catholique de Louvain; ICTEAM Institute; 1348 Louvain-la-Neuve Belgium
dc.contributor.institutionUniversity of Antwerp; Groenenborger Groenenborgerlaan 171 2020 Antwerp Belgium
dc.contributor.institutionImec Division IMOMEC - Partner in Solliance; 3590 Hasselt Belgium
dc.contributor.institutionDepartment of Electrical Engineering (ESAT); KU Leuven; 3001 Leuven Belgium
dc.contributor.institutionInstitute for Material Research (IMO) Hasselt University; 3590 Hasselt Belgium
dc.contributor.institutionFaculty of Engineering Technology; Hasselt University; 3590 Hasselt Belgium
kaust.personAllen, Thomas
refterms.dateFOA2020-04-08T02:11:07Z
dc.date.published-online2018-02-27
dc.date.published-print2018-04


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