Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2018-03-18
Print Publication Date2018-05
Permanent link to this recordhttp://hdl.handle.net/10754/627464
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AbstractTransition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.
CitationWei B, Mei G, Liang H, Qi Z, Zhang D, et al. (2018) Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors. Journal of Power Sources 385: 39–44. Available: http://dx.doi.org/10.1016/j.jpowsour.2018.03.023.
SponsorsThis work was financially supported by the National Nature Science Foundation of China (No. 51372212).
JournalJournal of Power Sources