Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors
Type
ArticleKAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2018-03-18Online Publication Date
2018-03-18Print Publication Date
2018-05Permanent link to this record
http://hdl.handle.net/10754/627464
Metadata
Show full item recordAbstract
Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.Citation
Wei B, Mei G, Liang H, Qi Z, Zhang D, et al. (2018) Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors. Journal of Power Sources 385: 39–44. Available: http://dx.doi.org/10.1016/j.jpowsour.2018.03.023.Sponsors
This work was financially supported by the National Nature Science Foundation of China (No. 51372212).Publisher
Elsevier BVJournal
Journal of Power SourcesAdditional Links
http://www.sciencedirect.com/science/article/pii/S0378775318302477ae974a485f413a2113503eed53cd6c53
10.1016/j.jpowsour.2018.03.023