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dc.contributor.authorJanjua, Bilal
dc.contributor.authorPriante, Davide
dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorAlanazi, Lafi M.
dc.contributor.authorZhao, Chao
dc.contributor.authorAlhamoud, Abdullah
dc.contributor.authorAlias, Mohd Sharizal
dc.contributor.authorRahman, Abdul
dc.contributor.authorAlyamani, Ahmed
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2018-03-19T09:05:23Z
dc.date.available2018-03-19T09:05:23Z
dc.date.issued2018-03-16
dc.identifier.citationJanjua B, Priante D, Prabaswara A, Alanazi LM, Zhao C, et al. (2018) Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability. IEEE Photonics Journal: 1–1. Available: http://dx.doi.org/10.1109/JPHOT.2018.2814482.
dc.identifier.isbn978-1-5386-5358-6
dc.identifier.issn1943-0655
dc.identifier.doi10.1109/JPHOT.2018.2814482
dc.identifier.doi10.1109/IPCon.2018.8527172
dc.identifier.urihttp://hdl.handle.net/10754/627357
dc.description.abstractGroup-III nitride-based ultraviolet (UV) quantum-disks (Qdisks) nanowires (NWs) light-emitting diodes grown on silicon substrates offer a scalable, environment-friendly, compact, and low-cost solution for numerous applications such as solid-state lighting, spectroscopy, and biomedical. However, the internal quantum efficiency, injection efficiency, and extraction efficiency need to be further improved. The focus of this paper encompasses investigations based on structural optimization, device simulation, and device reliability. To optimize a UV-A (320-400 nm) device structure we utilize the self-assembled quantum-disk-NWs with varying quantum-disks thickness to study carrier separation in active-region and implement an improved p-contact-layer to increase output power. By simulation, we found a 100° improvement in the direct recombination rate for samples with thicker Qdisks thickness of 1.2 nm compared to the sample with 0.6 nm-thick Qdisks. Moreover, the sample with graded top Mg-doped AlGaN layer in conjunction with thin Mg-doped GaN layer shows 10° improvement in the output power compared to the samples with thicker top Mg-doped GaN absorbing contact layer. A fitting with ABC model revealed the increase in non-radiative recombination centers in the active region after a soft stress-test. This work aims to shed light on the research efforts required for furthering the UV NWs LED research for practical applications.
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding C/M-20000-12-001-77.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/8318645/
dc.relation.urlhttps://ieeexplore.ieee.org/document/8527172
dc.rights(c) 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectLight-emitting diodes (LEDs)
dc.subjectquantum disks
dc.subjectnanowires
dc.subjectnitrides
dc.subjectultraviolet
dc.titleUltraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalIEEE Photonics Journal
dc.conference.date30 Sept.-4 Oct. 2018
dc.conference.name2018 IEEE Photonics Conference (IPC)
dc.conference.locationReston, VA, USA
dc.eprint.versionPost-print
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086, Saudi Arabia.
kaust.personJanjua, Bilal
kaust.personPriante, Davide
kaust.personPrabaswara, Aditya
kaust.personZhao, Chao
kaust.personAlhamoud, Abdullah
kaust.personAlias, Mohd Sharizal
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2018-06-13T18:48:00Z
dc.date.published-online2018-03-16
dc.date.published-print2018-04


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