Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability
Type
ArticleAuthors
Janjua, Bilal
Priante, Davide

Prabaswara, Aditya

Alanazi, Lafi M.
Zhao, Chao

Alhamoud, Abdullah
Alias, Mohd Sharizal

Rahman, Abdul
Alyamani, Ahmed
Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
KAUST Grant Number
BAS/1/1614-01-01Date
2018-03-16Online Publication Date
2018-03-16Print Publication Date
2018-04Permanent link to this record
http://hdl.handle.net/10754/627357
Metadata
Show full item recordAbstract
Group-III nitride-based ultraviolet (UV) quantum-disks (Qdisks) nanowires (NWs) light-emitting diodes grown on silicon substrates offer a scalable, environment-friendly, compact, and low-cost solution for numerous applications such as solid-state lighting, spectroscopy, and biomedical. However, the internal quantum efficiency, injection efficiency, and extraction efficiency need to be further improved. The focus of this paper encompasses investigations based on structural optimization, device simulation, and device reliability. To optimize a UV-A (320-400 nm) device structure we utilize the self-assembled quantum-disk-NWs with varying quantum-disks thickness to study carrier separation in active-region and implement an improved p-contact-layer to increase output power. By simulation, we found a 100° improvement in the direct recombination rate for samples with thicker Qdisks thickness of 1.2 nm compared to the sample with 0.6 nm-thick Qdisks. Moreover, the sample with graded top Mg-doped AlGaN layer in conjunction with thin Mg-doped GaN layer shows 10° improvement in the output power compared to the samples with thicker top Mg-doped GaN absorbing contact layer. A fitting with ABC model revealed the increase in non-radiative recombination centers in the active region after a soft stress-test. This work aims to shed light on the research efforts required for furthering the UV NWs LED research for practical applications.Citation
Janjua B, Priante D, Prabaswara A, Alanazi LM, Zhao C, et al. (2018) Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability. IEEE Photonics Journal: 1–1. Available: http://dx.doi.org/10.1109/JPHOT.2018.2814482.Sponsors
We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding C/M-20000-12-001-77.Journal
IEEE Photonics JournalConference/Event name
2018 IEEE Photonics Conference (IPC)ISBN
978-1-5386-5358-6Additional Links
http://ieeexplore.ieee.org/document/8318645/https://ieeexplore.ieee.org/document/8527172
ae974a485f413a2113503eed53cd6c53
10.1109/JPHOT.2018.2814482