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    Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability

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    08318645.pdf
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    Type
    Article
    Authors
    Janjua, Bilal cc
    Priante, Davide cc
    Prabaswara, Aditya cc
    Alanazi, Lafi M.
    Zhao, Chao cc
    Alhamoud, Abdullah
    Alias, Mohd Sharizal cc
    Rahman, Abdul
    Alyamani, Ahmed
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2018-03-16
    Online Publication Date
    2018-03-16
    Print Publication Date
    2018-04
    Permanent link to this record
    http://hdl.handle.net/10754/627357
    
    Metadata
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    Abstract
    Group-III nitride-based ultraviolet (UV) quantum-disks (Qdisks) nanowires (NWs) light-emitting diodes grown on silicon substrates offer a scalable, environment-friendly, compact, and low-cost solution for numerous applications such as solid-state lighting, spectroscopy, and biomedical. However, the internal quantum efficiency, injection efficiency, and extraction efficiency need to be further improved. The focus of this paper encompasses investigations based on structural optimization, device simulation, and device reliability. To optimize a UV-A (320-400 nm) device structure we utilize the self-assembled quantum-disk-NWs with varying quantum-disks thickness to study carrier separation in active-region and implement an improved p-contact-layer to increase output power. By simulation, we found a 100° improvement in the direct recombination rate for samples with thicker Qdisks thickness of 1.2 nm compared to the sample with 0.6 nm-thick Qdisks. Moreover, the sample with graded top Mg-doped AlGaN layer in conjunction with thin Mg-doped GaN layer shows 10° improvement in the output power compared to the samples with thicker top Mg-doped GaN absorbing contact layer. A fitting with ABC model revealed the increase in non-radiative recombination centers in the active region after a soft stress-test. This work aims to shed light on the research efforts required for furthering the UV NWs LED research for practical applications.
    Citation
    Janjua B, Priante D, Prabaswara A, Alanazi LM, Zhao C, et al. (2018) Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability. IEEE Photonics Journal: 1–1. Available: http://dx.doi.org/10.1109/JPHOT.2018.2814482.
    Sponsors
    We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding C/M-20000-12-001-77.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    IEEE Photonics Journal
    Conference/Event name
    2018 IEEE Photonics Conference (IPC)
    ISBN
    978-1-5386-5358-6
    DOI
    10.1109/JPHOT.2018.2814482
    10.1109/IPCon.2018.8527172
    Additional Links
    http://ieeexplore.ieee.org/document/8318645/
    https://ieeexplore.ieee.org/document/8527172
    ae974a485f413a2113503eed53cd6c53
    10.1109/JPHOT.2018.2814482
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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