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dc.contributor.authorHuang, Wentao
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2018-03-18T11:06:35Z
dc.date.available2018-03-18T11:06:35Z
dc.date.issued2018-03-13
dc.identifier.citationHuang W, Lin Y-H, Anthopoulos TD (2018) High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.8b00121.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.8b00121
dc.identifier.urihttp://hdl.handle.net/10754/627348
dc.description.abstractCombining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.
dc.description.sponsorshipThe work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.8b00121
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.8b00121.
dc.subjectambipolar transport
dc.subjectfullerenes
dc.subjectPCBM
dc.subjectphototransistor
dc.subjectUV photodetector
dc.titleHigh Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPost-print
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, U.K.
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2019-03-13T00:00:00Z
dc.date.published-online2018-03-13
dc.date.published-print2018-03-28


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