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dc.contributor.authorEbaid, Mohamed
dc.contributor.authorMin, Jungwook
dc.contributor.authorZhao, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorIdriss, Hicham
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2018-03-15T11:35:54Z
dc.date.available2018-03-15T11:35:54Z
dc.date.issued2018
dc.identifier.citationEbaid M, Min J, Zhao C, Ng TK, Idriss H, et al. (2018) Water Splitting over Epitaxially Grown InGaN Nanowires on-Metallic Titanium/Silicon Template: Reduced Interfacial Transfer Resistance and Improved Stability. Journal of Materials Chemistry A. Available: http://dx.doi.org/10.1039/c7ta11338b.
dc.identifier.issn2050-7488
dc.identifier.issn2050-7496
dc.identifier.doi10.1039/c7ta11338b
dc.identifier.urihttp://hdl.handle.net/10754/627346
dc.description.abstractWater splitting using InGaN-based photocatalysts may have a great contribution in future renewable energy production systems. Among the most important parameters to solve are those related to substrate lattice-matching compatibility. Here, we directly grow InGaN nanowires (NWs) on a metallic Ti/Si template, for improving water splitting performance compared to a bare Si substrate. The open circuit potential of the epitaxially grown InGaN NWs on metallic Ti was almost two times that of those grown on Si substrate. The interfacial transfer resistance was also reduced significantly after introducing the metallic Ti interlayer. An applied-bias-photon-to-current conversion efficiency of 2.2% and almost unity Faradic efficiency for hydrogen generation were achieved using this approach. The InGaN NWs grown on Ti showed improved stability of hydrogen generation under continuous operation conditions, when compared to those grown on Si, emphasizing the role of the semiconductor-on-metal approach in enhancing the overall efficiency of water splitting catalysts.
dc.description.sponsorshipWe acknowledge financial support from Saudi Basic Industries Corporation (SABIC), Grant No. RGC/3/3068-01-01. BSO, TKN, CZ, and JWM acknowledge funding from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2018/TA/C7TA11338B#!divAbstract
dc.rightsArchived with thanks to Journal of Materials Chemistry A
dc.titleWater Splitting over Epitaxially Grown InGaN Nanowires on-Metallic Titanium/Silicon Template: Reduced Interfacial Transfer Resistance and Improved Stability
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUST
dc.identifier.journalJournal of Materials Chemistry A
dc.eprint.versionPost-print
kaust.personEbaid, Mohamed
kaust.personMin, Jungwook
kaust.personZhao, Chao
kaust.personNg, Tien Khee
kaust.personIdriss, Hicham
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01


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