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dc.contributor.authorLim, Namsoo*
dc.contributor.authorYoo, Tae Jin*
dc.contributor.authorKim, Jin Tae*
dc.contributor.authorPak, Yusin*
dc.contributor.authorKumaresan, Yogeenth*
dc.contributor.authorKim, Hyeonghun*
dc.contributor.authorKim, Woochul*
dc.contributor.authorLee, Byoung Hun*
dc.contributor.authorJung, Gun Young*
dc.date.accessioned2018-03-15T11:35:54Z
dc.date.available2018-03-15T11:35:54Z
dc.date.issued2018-02-28en
dc.identifier.citationLim N, Yoo TJ, Kim JT, Pak Y, Kumaresan Y, et al. (2018) Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate. RSC Advances 8: 9031–9037. Available: http://dx.doi.org/10.1039/c7ra11601b.en
dc.identifier.issn2046-2069en
dc.identifier.doi10.1039/c7ra11601ben
dc.identifier.urihttp://hdl.handle.net/10754/627344
dc.description.abstractA tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.en
dc.description.sponsorshipThis work was supported by the Pioneer Research Center Program (NRF-2016M3C1A3908893) and by the Basic Science Research Program (NRF-2016R1A2B4006395) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education. The research was partially supported by the GIST Research Institute (GRI) project through a grant provided by GIST in 2017.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/content/articlehtml/2018/ra/c7ra11601ben
dc.rightsThis Open Access Article is licensed under a Creative Commons Attribution-Non Commercial 3.0 Unported Licenceen
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/en
dc.titleTunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrateen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division*
dc.identifier.journalRSC Advancesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea*
dc.contributor.institutionCreative Future Research Laboratory, Electronics and Telecommunications Research Institute, 218, Gajeong-ro Yuseong, Daejeon 305-700, Republic of Korea*
kaust.authorPak, Yusin*
refterms.dateFOA2018-06-14T05:50:39Z


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This Open Access Article is licensed under a Creative Commons Attribution-Non Commercial 3.0 Unported Licence
Except where otherwise noted, this item's license is described as This Open Access Article is licensed under a Creative Commons Attribution-Non Commercial 3.0 Unported Licence