dc.contributor.author Chen, Jyun-Hong dc.contributor.author Zhong, Yuan-Liang dc.contributor.author Li, Lain-Jong dc.contributor.author Chen, Chii-Dong dc.date.accessioned 2018-03-15T11:35:53Z dc.date.available 2018-03-15T11:35:53Z dc.date.issued 2018-04-09 dc.identifier.citation Chen J-H, Zhong Y-L, Li L-J, Chen C-D (2018) Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aab5ff. dc.identifier.issn 0957-4484 dc.identifier.issn 1361-6528 dc.identifier.pmid 29528843 dc.identifier.doi 10.1088/1361-6528/aab5ff dc.identifier.uri http://hdl.handle.net/10754/627333 dc.description.abstract Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer $MoS_{2}$ of 2D materials also contains 2DEG in an atomic layer as field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular $MoS_{2}$ through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer $MoS_{2}$. dc.description.sponsorship This study was funded by the National Science Council of Taiwan (MOST 104-2112-M-033-006). dc.publisher IOP Publishing dc.relation.url http://iopscience.iop.org/article/10.1088/1361-6528/aab5ff dc.rights This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6528/aab5ff dc.subject Two-dimensional materials dc.subject metal transition dichalcogenide dc.subject MoS2 dc.subject field effect transistor dc.subject mobility dc.subject ripplon dc.subject Wigner crystal dc.title Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD $MoS_{2}$ with grain boundary dc.type Article dc.contributor.department Material Science and Engineering Program dc.contributor.department Physical Science and Engineering (PSE) Division dc.identifier.journal Nanotechnology dc.eprint.version Post-print dc.contributor.institution National Tsing Hua University, Hsinchu, 30013, TAIWAN. dc.contributor.institution Department of Physics, Chung Yuan Christian University, 200, Chung Pei Rd, Chung Li, 32023, TAIWAN. dc.contributor.institution Institute of Physics, Academia Sinica, Taipei 11529, TAIWAN, Taipei, TAIWAN. kaust.person Li, Lain-Jong refterms.dateFOA 2019-03-12T00:00:00Z dc.date.published-online 2018-04-09 dc.date.published-print 2018-06-01
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