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dc.contributor.authorChen, Jyun-Hong
dc.contributor.authorZhong, Yuan-Liang
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorChen, Chii-Dong
dc.date.accessioned2018-03-15T11:35:53Z
dc.date.available2018-03-15T11:35:53Z
dc.date.issued2018-04-09
dc.identifier.citationChen J-H, Zhong Y-L, Li L-J, Chen C-D (2018) Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aab5ff.
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.pmid29528843
dc.identifier.doi10.1088/1361-6528/aab5ff
dc.identifier.urihttp://hdl.handle.net/10754/627333
dc.description.abstractTwo-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer $MoS_{2}$ of 2D materials also contains 2DEG in an atomic layer as field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular $MoS_{2}$ through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer $MoS_{2}$.
dc.description.sponsorshipThis study was funded by the National Science Council of Taiwan (MOST 104-2112-M-033-006).
dc.publisherIOP Publishing
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6528/aab5ff
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6528/aab5ff
dc.subjectTwo-dimensional materials
dc.subjectmetal transition dichalcogenide
dc.subjectMoS2
dc.subjectfield effect transistor
dc.subjectmobility
dc.subjectripplon
dc.subjectWigner crystal
dc.titleObservation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD $MoS_{2}$ with grain boundary
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNanotechnology
dc.eprint.versionPost-print
dc.contributor.institutionNational Tsing Hua University, Hsinchu, 30013, TAIWAN.
dc.contributor.institutionDepartment of Physics, Chung Yuan Christian University, 200, Chung Pei Rd, Chung Li, 32023, TAIWAN.
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei 11529, TAIWAN, Taipei, TAIWAN.
kaust.personLi, Lain-Jong
refterms.dateFOA2019-03-12T00:00:00Z
dc.date.published-online2018-04-09
dc.date.published-print2018-06-01


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