Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD $MoS_{2}$ with grain boundary
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ArticleKAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2018-04-09Online Publication Date
2018-04-09Print Publication Date
2018-06-01Permanent link to this record
http://hdl.handle.net/10754/627333
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Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer $MoS_{2}$ of 2D materials also contains 2DEG in an atomic layer as field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular $MoS_{2}$ through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer $MoS_{2}$.Citation
Chen J-H, Zhong Y-L, Li L-J, Chen C-D (2018) Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aab5ff.Sponsors
This study was funded by the National Science Council of Taiwan (MOST 104-2112-M-033-006).Publisher
IOP PublishingJournal
NanotechnologyPubMed ID
29528843Additional Links
http://iopscience.iop.org/article/10.1088/1361-6528/aab5ffae974a485f413a2113503eed53cd6c53
10.1088/1361-6528/aab5ff
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