De Wolf, Stefaan
KAUST DepartmentKAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2018-03-02
Print Publication Date2018-03
Permanent link to this recordhttp://hdl.handle.net/10754/627318
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AbstractOwing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
CitationKobayashi E, Boccard M, Jeangros Q, Rodkey N, Vresilovic D, et al. (2018) Amorphous gallium oxide grown by low-temperature PECVD. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36: 021518. Available: http://dx.doi.org/10.1116/1.5018800.
SponsorsThis work received financial support from the Swiss Federal Office of Energy, EU FP7 program (CHETAAH Project, Contract No. 609788), CCEM CONNECT PV, Swiss National Science Foundation via the NRP70 Energy Turnaround project PV2050 and the DisCO (No. CRSII2-154474) projects. The authors thank CIME at EPFL for microscopes access. Daniel Franta acknowledges the financial support from project LO1411 (NPU I) funded by the Ministry of Education Youth and Sports of Czech Republic.
PublisherAmerican Vacuum Society