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dc.contributor.authorAlshehri, Bandar
dc.contributor.authorDogheche, Karim
dc.contributor.authorBelahsene, Sofiane
dc.contributor.authorJanjua, Bilal
dc.contributor.authorRamdane, Abderrahim
dc.contributor.authorPatriarche, Gilles
dc.contributor.authorNg, Tien Khee
dc.contributor.authorS-Ooi, Boon
dc.contributor.authorDecoster, Didier
dc.contributor.authorDogheche, Elhadj
dc.date.accessioned2018-03-11T06:54:14Z
dc.date.available2018-03-11T06:54:14Z
dc.date.issued2016-06-07
dc.identifier.citationAlshehri B, Dogheche K, Belahsene S, Janjua B, Ramdane A, et al. (2016) Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics. MRS Advances 1: 1735–1742. Available: http://dx.doi.org/10.1557/adv.2016.417.
dc.identifier.issn2059-8521
dc.identifier.doi10.1557/adv.2016.417
dc.identifier.urihttp://hdl.handle.net/10754/627281
dc.description.abstractIn this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.
dc.publisherCambridge University Press (CUP)
dc.subjectmetalorganic deposition
dc.subjectmolecular beam epitaxy (MBE)
dc.subjectscanning transmission electron microscopy (STEM)
dc.titleSynthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journalMRS Advances
dc.contributor.institutionInstitute of Electronics Microelectronics and Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520), Villeneuve d'ascq, , France
dc.contributor.institutionLaboratory for Photonics Nanostructures, CNRS, Route de Nozay, Marcoussis, 91460, , France
kaust.personJanjua, Bilal
kaust.personNg, Tien Khee
kaust.personS-Ooi, Boon
dc.date.published-online2016-06-07
dc.date.published-print2016


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