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    Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

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    Type
    Article
    Authors
    Alshehri, Bandar
    Dogheche, Karim
    Belahsene, Sofiane
    Janjua, Bilal cc
    Ramdane, Abderrahim
    Patriarche, Gilles
    Ng, Tien Khee cc
    S-Ooi, Boon
    Decoster, Didier
    Dogheche, Elhadj
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    Date
    2016-06-07
    Online Publication Date
    2016-06-07
    Print Publication Date
    2016
    Permanent link to this record
    http://hdl.handle.net/10754/627281
    
    Metadata
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    Abstract
    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.
    Citation
    Alshehri B, Dogheche K, Belahsene S, Janjua B, Ramdane A, et al. (2016) Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics. MRS Advances 1: 1735–1742. Available: http://dx.doi.org/10.1557/adv.2016.417.
    Publisher
    Cambridge University Press (CUP)
    Journal
    MRS Advances
    DOI
    10.1557/adv.2016.417
    ae974a485f413a2113503eed53cd6c53
    10.1557/adv.2016.417
    Scopus Count
    Collections
    Articles; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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