Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics
Type
ArticleAuthors
Alshehri, BandarDogheche, Karim
Belahsene, Sofiane
Janjua, Bilal

Ramdane, Abderrahim
Patriarche, Gilles
Ng, Tien Khee

S-Ooi, Boon
Decoster, Didier
Dogheche, Elhadj
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
Date
2016-06-07Online Publication Date
2016-06-07Print Publication Date
2016Permanent link to this record
http://hdl.handle.net/10754/627281
Metadata
Show full item recordAbstract
In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.Citation
Alshehri B, Dogheche K, Belahsene S, Janjua B, Ramdane A, et al. (2016) Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics. MRS Advances 1: 1735–1742. Available: http://dx.doi.org/10.1557/adv.2016.417.Publisher
Cambridge University Press (CUP)Journal
MRS Advancesae974a485f413a2113503eed53cd6c53
10.1557/adv.2016.417