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dc.contributor.authorMatsuoka, Hirofumi
dc.contributor.authorKanahashi, Kaito
dc.contributor.authorTanaka, Naoki
dc.contributor.authorShoji, Yoshiaki
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorPu, Jiang
dc.contributor.authorIto, Hiroshi
dc.contributor.authorOhta, Hiromichi
dc.contributor.authorFukushima, Takanori
dc.contributor.authorTakenobu, Taishi
dc.date.accessioned2018-03-11T06:54:10Z
dc.date.available2018-03-11T06:54:10Z
dc.date.issued2018-01-18
dc.identifier.citationMatsuoka H, Kanahashi K, Tanaka N, Shoji Y, Li L-J, et al. (2018) Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant. Japanese Journal of Applied Physics 57: 02CB15. Available: http://dx.doi.org/10.7567/jjap.57.02cb15.
dc.identifier.issn0021-4922
dc.identifier.issn1347-4065
dc.identifier.doi10.7567/jjap.57.02cb15
dc.identifier.urihttp://hdl.handle.net/10754/627245
dc.description.abstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
dc.description.sponsorshipT.T. was partially supported by Grants-in-Aid from MEXT (JP26102012 "π-System Figuration", JP17H01069, JP16K13618, JP15K21721, and JP25000003). K.K. and J.P. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology (MEST) of Japan. T.F. was supported by Grant-in-Aid for Scientific Research on Innovative Areas (JP26102008 "π-System Figuration") and "Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" from MEXT. Y.S. was supported by the Asahi Glass Foundation. This work was also supported in part by the Network Joint Research Center for Materials and Devices.
dc.publisherJapan Society of Applied Physics
dc.relation.urlhttp://iopscience.iop.org/article/10.7567/JJAP.57.02CB15/meta
dc.titleChemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalJapanese Journal of Applied Physics
dc.contributor.institutionDepartment of Applied Physics, Nagoya University, Nagoya 464-8303, Japan
dc.contributor.institutionDepartment of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan
dc.contributor.institutionLaboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
dc.contributor.institutionResearch Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan
kaust.personLi, Lain-Jong


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