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    Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

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    Type
    Article
    Authors
    Matsuoka, Hirofumi
    Kanahashi, Kaito
    Tanaka, Naoki
    Shoji, Yoshiaki
    Li, Lain-Jong cc
    Pu, Jiang
    Ito, Hiroshi
    Ohta, Hiromichi
    Fukushima, Takanori
    Takenobu, Taishi
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2018-01-18
    Online Publication Date
    2018-01-18
    Print Publication Date
    2018-02-01
    Permanent link to this record
    http://hdl.handle.net/10754/627245
    
    Metadata
    Show full item record
    Abstract
    Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
    Citation
    Matsuoka H, Kanahashi K, Tanaka N, Shoji Y, Li L-J, et al. (2018) Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant. Japanese Journal of Applied Physics 57: 02CB15. Available: http://dx.doi.org/10.7567/jjap.57.02cb15.
    Sponsors
    T.T. was partially supported by Grants-in-Aid from MEXT (JP26102012 "π-System Figuration", JP17H01069, JP16K13618, JP15K21721, and JP25000003). K.K. and J.P. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology (MEST) of Japan. T.F. was supported by Grant-in-Aid for Scientific Research on Innovative Areas (JP26102008 "π-System Figuration") and "Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" from MEXT. Y.S. was supported by the Asahi Glass Foundation. This work was also supported in part by the Network Joint Research Center for Materials and Devices.
    Publisher
    IOP Publishing
    Journal
    Japanese Journal of Applied Physics
    DOI
    10.7567/jjap.57.02cb15
    Additional Links
    http://iopscience.iop.org/article/10.7567/JJAP.57.02CB15/meta
    ae974a485f413a2113503eed53cd6c53
    10.7567/jjap.57.02cb15
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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