Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2018-01-18
Print Publication Date2018-02-01
Permanent link to this recordhttp://hdl.handle.net/10754/627245
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AbstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
CitationMatsuoka H, Kanahashi K, Tanaka N, Shoji Y, Li L-J, et al. (2018) Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant. Japanese Journal of Applied Physics 57: 02CB15. Available: http://dx.doi.org/10.7567/jjap.57.02cb15.
SponsorsT.T. was partially supported by Grants-in-Aid from MEXT (JP26102012 "π-System Figuration", JP17H01069, JP16K13618, JP15K21721, and JP25000003). K.K. and J.P. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology (MEST) of Japan. T.F. was supported by Grant-in-Aid for Scientific Research on Innovative Areas (JP26102008 "π-System Figuration") and "Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" from MEXT. Y.S. was supported by the Asahi Glass Foundation. This work was also supported in part by the Network Joint Research Center for Materials and Devices.