Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
Type
Conference PaperAuthors
Lee, ChangminShen, Chao

Farrell, Robert M.
Nakamura, Shuji
Ooi, Boon S.

Bowers, John E.
DenBaars, Steven P.
Speck, James S.
Cozzan, Clayton
Alyamani, Ahmed Y.
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
Date
2018-02-23Permanent link to this record
http://hdl.handle.net/10754/627204
Metadata
Show full item recordAbstract
We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.Citation
Lee C, Shen C, Farrell RM, Nakamura S, Ooi BS, et al. (2018) Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems. Gallium Nitride Materials and Devices XIII. Available: http://dx.doi.org/10.1117/12.2315791.Sponsors
This work was funded by the KACST(SB140013)-KAUST(SB140014)-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS- 0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR 1121053).Publisher
SPIE-Intl Soc Optical Engae974a485f413a2113503eed53cd6c53
10.1117/12.2315791