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    Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

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    Type
    Conference Paper
    Authors
    Lee, Changmin
    Shen, Chao cc
    Farrell, Robert M.
    Nakamura, Shuji
    Ooi, Boon S. cc
    Bowers, John E.
    DenBaars, Steven P.
    Speck, James S.
    Cozzan, Clayton
    Alyamani, Ahmed Y.
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    Date
    2018-02-23
    Permanent link to this record
    http://hdl.handle.net/10754/627204
    
    Metadata
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    Abstract
    We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.
    Citation
    Lee C, Shen C, Farrell RM, Nakamura S, Ooi BS, et al. (2018) Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems. Gallium Nitride Materials and Devices XIII. Available: http://dx.doi.org/10.1117/12.2315791.
    Sponsors
    This work was funded by the KACST(SB140013)-KAUST(SB140014)-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS- 0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR 1121053).
    Publisher
    SPIE-Intl Soc Optical Eng
    Journal
    Gallium Nitride Materials and Devices XIII
    DOI
    10.1117/12.2315791
    Additional Links
    https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10532/2315791/Semipolar-GaN-based-laser-diodes-for-Gbit-s-white-lighting/10.1117/12.2315791.full
    ae974a485f413a2113503eed53cd6c53
    10.1117/12.2315791
    Scopus Count
    Collections
    Conference Papers; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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