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dc.contributor.authorAlias, Mohd Sharizal
dc.contributor.authorAlatawi, Abdullah
dc.contributor.authorWong, Ka Chun
dc.contributor.authorTangi, Malleswararao
dc.contributor.authorHolguin Lerma, Jorge Alberto
dc.contributor.authorStegenburgs, Edgars
dc.contributor.authorShakfa, Mohammad Khaled
dc.contributor.authorNg, Tien Khee
dc.contributor.authorRahman, Abdul
dc.contributor.authorAlyamani, Ahmed
dc.contributor.authorOoi, Boon S.
dc.identifier.citationAlias S, Alatawi A, Wong KC, Tangi M, Holguin-Lerma JA, et al. (2018) High reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime. IEEE Photonics Journal: 1–1. Available:
dc.description.abstractA distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ~240 nm is deposited using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The deposited YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ~240 nm with a stopband of ~50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.
dc.description.sponsorshipThis publication is based upon work supported by the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and the King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01. This research used resources of the Core Labs of KAUST.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rights(c) 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Released under the IEEE Open Access Publishing Agreement.
dc.subjectDistributed Bragg Reflector
dc.subjectthin films
dc.titleHigh reflectivity YDH/SiO2 distributed Bragg reflector for UV-C wavelength regime
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentComputer Science Program
dc.identifier.journalIEEE Photonics Journal
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKACST, King Abdulaziz City for Science and Technology, Riyadh Saudi Arabia
kaust.personAlias, Mohd Sharizal
kaust.personAlatawi, Abdullah
kaust.personWong, Ka Chun
kaust.personTangi, Malleswararao
kaust.personHolguin Lerma, Jorge Alberto
kaust.personStegenburgs, Edgars
kaust.personShakfa, Mohammad Khaled
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.

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