Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces
Type
ArticleAuthors
Liu, Heng-JuiWang, Jing-Ching
Cho, Deok-Yong
Ho, Kang-Ting

Lin, Jheng-Cyuan
Huang, Bo-Chao
Fang, Yue-wen
Zhu, Yuan-Min
Zhan, Qian
Xie, Lin
Pan, Xiao-Qing
Chiu, Ya-Ping
Duan, Chun-gang
He, Jr-Hau

Chu, Ying-Hao

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Date
2018-01-31Online Publication Date
2018-01-31Print Publication Date
2018-03-21Permanent link to this record
http://hdl.handle.net/10754/627132
Metadata
Show full item recordAbstract
The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.Citation
Liu H-J, Wang J-C, Cho D-Y, Ho K-T, Lin J-C, et al. (2018) Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces. ACS Photonics. Available: http://dx.doi.org/10.1021/acsphotonics.7b01339.Sponsors
The authors gratefully acknowledge the financial support by the Ministry of Science and Technology under Grant No. MOST 103-2119-M-009 -003 -MY3 and MOST 106-2112-M-005-001-. The work is supported in part by Ministry of Science, ICT and Future Planning of Korea under Grant No. NRF-2015R1C1A1A02037514. The work at University of Science and Technology Beijing is supported by National Natural Science Foundation of China with Grant Nos. 51571021 and 51371031. The work at Nanjing University is supported through the National Basic Research Program of China under Grant No. 2015CB654900. The work at University of California-Irvine is supported by the National Science Foundation through the grant No. DMR-1506535.Publisher
American Chemical Society (ACS)Journal
ACS PhotonicsAdditional Links
https://pubs.acs.org/doi/10.1021/acsphotonics.7b01339ae974a485f413a2113503eed53cd6c53
10.1021/acsphotonics.7b01339