Highly tunable NEMS shallow arches
dc.contributor.author | Kazmi, Syed | |
dc.contributor.author | Hajjaj, Amal | |
dc.contributor.author | Da Costa, Pedro M. F. J. | |
dc.contributor.author | Younis, Mohammad I. | |
dc.date.accessioned | 2018-02-13T10:31:11Z | |
dc.date.available | 2018-02-13T10:31:11Z | |
dc.date.issued | 2017-11-30 | |
dc.identifier.citation | Kazmi SNR, Hajjaj AZ, Costa PMFJ, Younis MI (2017) Highly tunable NEMS shallow arches. 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO). Available: http://dx.doi.org/10.1109/NANO.2017.8117332. | |
dc.identifier.doi | 10.1109/NANO.2017.8117332 | |
dc.identifier.uri | http://hdl.handle.net/10754/627112 | |
dc.description.abstract | We report highly tunable nanoelectromechanical systems NEMS shallow arches under dc excitation voltages. Silicon based in-plane doubly clamped bridges, slightly curved as shallow arches, are fabricated using standard electron beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator wafer. By designing the structures to have gap to thickness ratio of more than four, the mid-plane stretching of the nano arches is maximized such that an increase in the dc bias voltage will result into continuous increase in the resonance frequency of the resonators to wide ranges. This is confirmed analytically based on a nonlinear beam model. The experimental results are found to be in good agreement with that of the results from developed analytical model. A maximum tunability of 108.14% for a 180 nm thick arch with an initially designed gap of 1 μm between the beam and the driving/sensing electrodes is achieved. Furthermore, a tunable narrow bandpass filter is demonstrated, which opens up opportunities for designing such structures as filtering elements in high frequency ranges. | |
dc.description.sponsorship | Research supported by King Abdullah University of Science and Technology (KAUST). | |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | |
dc.relation.url | http://ieeexplore.ieee.org/document/8117332/ | |
dc.rights | (c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. | |
dc.title | Highly tunable NEMS shallow arches | |
dc.type | Conference Paper | |
dc.contributor.department | Material Science and Engineering Program | |
dc.contributor.department | Mechanical Engineering Program | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) | |
dc.conference.date | 2017-07-25 to 2017-07-28 | |
dc.conference.name | 17th IEEE International Conference on Nanotechnology, NANO 2017 | |
dc.conference.location | Pittsburgh, PA, USA | |
dc.eprint.version | Post-print | |
kaust.person | Kazmi, Syed | |
kaust.person | Hajjaj, Amal Z. | |
kaust.person | Da Costa, Pedro M. F. J. | |
kaust.person | Younis, Mohammad I. | |
refterms.dateFOA | 2018-06-14T05:17:08Z | |
dc.date.published-online | 2017-11-30 | |
dc.date.published-print | 2017-07 |
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