Show simple item record

dc.contributor.authorKazmi, Syed N. R.
dc.contributor.authorHajjaj, Amal Z.
dc.contributor.authorDa Costa, Pedro M. F. J.
dc.contributor.authorYounis, Mohammad I.
dc.date.accessioned2018-02-13T10:31:11Z
dc.date.available2018-02-13T10:31:11Z
dc.date.issued2017-11-30
dc.identifier.citationKazmi SNR, Hajjaj AZ, Costa PMFJ, Younis MI (2017) Highly tunable NEMS shallow arches. 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO). Available: http://dx.doi.org/10.1109/NANO.2017.8117332.
dc.identifier.doi10.1109/NANO.2017.8117332
dc.identifier.urihttp://hdl.handle.net/10754/627112
dc.description.abstractWe report highly tunable nanoelectromechanical systems NEMS shallow arches under dc excitation voltages. Silicon based in-plane doubly clamped bridges, slightly curved as shallow arches, are fabricated using standard electron beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator wafer. By designing the structures to have gap to thickness ratio of more than four, the mid-plane stretching of the nano arches is maximized such that an increase in the dc bias voltage will result into continuous increase in the resonance frequency of the resonators to wide ranges. This is confirmed analytically based on a nonlinear beam model. The experimental results are found to be in good agreement with that of the results from developed analytical model. A maximum tunability of 108.14% for a 180 nm thick arch with an initially designed gap of 1 μm between the beam and the driving/sensing electrodes is achieved. Furthermore, a tunable narrow bandpass filter is demonstrated, which opens up opportunities for designing such structures as filtering elements in high frequency ranges.
dc.description.sponsorshipResearch supported by King Abdullah University of Science and Technology (KAUST).
dc.publisherIEEE
dc.relation.urlhttp://ieeexplore.ieee.org/document/8117332/
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.titleHighly tunable NEMS shallow arches
dc.typeConference Paper
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMechanical Engineering Program
dc.identifier.journal2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)
dc.conference.date2017-07-25 to 2017-07-28
dc.conference.name17th IEEE International Conference on Nanotechnology, NANO 2017
dc.conference.locationPittsburgh, PA, USA
dc.eprint.versionPost-print
kaust.personKazmi, Syed N. R.
kaust.personHajjaj, Amal Z.
kaust.personDa Costa, Pedro M. F. J.
kaust.personYounis, Mohammad I.
refterms.dateFOA2018-06-14T05:17:08Z


Files in this item

Thumbnail
Name:
IEEE NANO 2017_SNRKazmi.pdf
Size:
803.9Kb
Format:
PDF
Description:
Accepted Manuscript

This item appears in the following Collection(s)

Show simple item record