Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer
Albadri, Abdulrahman M.
Alyamani, Ahmed Y.
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
KAUST Grant NumberBAS/1/1614-01-01
Online Publication Date2018-02-06
Print Publication Date2018-12
Permanent link to this recordhttp://hdl.handle.net/10754/627075
MetadataShow full item record
AbstractConsumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.
CitationPrabaswara A, Min J-W, Zhao C, Janjua B, Zhang D, et al. (2018) Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer. Nanoscale Research Letters 13. Available: http://dx.doi.org/10.1186/s11671-018-2453-1.
SponsorsAP, JWM, CZ, BJ, TKN, and BSO gratefully acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP- 008. This work is partially supported by baseline funding, BAS/1/1614-01-01 from the King Abdullah University of Science and Technology (KAUST).
JournalNanoscale Research Letters
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